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Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
* * * * * * * *
TGF2021-04
Key Features and Performance
Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA) Chip Dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in)
Product Description
The TriQuint TGF2021-04 is a discrete 4 mm pHEMT which operates from DC-12 GHz. The TGF2021-04 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2021-04 typically provides > 36 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-04 appropriate for high efficiency applications. The TGF2021-04 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-04 has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant
Primary Applications
* * * * *
35 30
Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
Maximum Gain (dB)
25 20 15 10 5 0 0 2 4
MSG
MAG
6
8
10
12
14
16
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
Advance Product Information
September 19, 2005
TABLE I MAXIMUM RATINGS Symbol
V+ V
-
TGF2021-04
Value
12.5 V -5V to 0V 1.8 A 28 mA 31 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes
2/
I+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 21.7 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal)
Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 1200 1500 -1 Maximum -0.5 -14 -14 Unit mA mS V V V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TABLE III RF CHARACTERIZATION TABLE 1/
(TA = 25 C, Nominal) SYMBOL
Power Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 36.8 50 11 6.65 1.855 0.847 172.6 37.5 48 11 7.99 1.907
TGF2021-04
Vd = 12V Idq = 300mA UNITS
PARAMETER
Vd = 10V Idq = 300mA
dBm % dB pF -
0.847 170.8
Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient
36 59 11.5 12.25 2.154 0.879 167.6
36.7 55 11 13.90 2.021 0.885 166.3
dBm % dB pF -
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz 2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz 4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp. The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV THERMAL INFORMATION Test Conditions Parameter
Vd = 12 V (channel to backside of carrier) Idq = 300 mA Pdiss = 3.6 W
TCH (oC)
148
TJC (qC/W)
21.7
TM (HRS)
1.2 E+6
JC Thermal Resistance
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrie at 70C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
Linear Model for 1mm Unit pHEMT cell
Rdg Lg Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2021-04
vi
-
VvAC@HUApryy SrsrrprAQyhr
Ls
Rp, Cp
Rs
Source Gate
Source Source
Drain
UPC
Source
UPC = 1mm Unit pHEMT Cell
MODEL PARAMETER
Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd
Vd = 8V Idq = 75mA
0.45 0.14 0.41 0.310 2.39 1.22 0.20 149.1 0.115 6.29 0.009 0.089 0.120 33000 349000
Vd = 8V Idq = 100mA
0.45 0.14 0.43 0.318 2.58 1.19 0.201 152.3 0.107 6.63 0.009 0.089 0.120 33000 425000
Vd = 8V Idq = 125mA
0.45 0.14 0.46 0.314 2.70 1.20 0.201 158.8 0.101 6.99 0.009 0.089 0.120 35100 405000
Vd = 10V Idq = 75mA
0.45 0.17 0.41 0.296 2.61 1.24 0.198 171.8 0.101 7.19 0.009 0.089 0.120 28900 305000
Vd = 10V Idq = 100mA
0.450 0.160 0.450 0.303 2.74 1.23 0.199 173.7 0.098 7.410 0.010 0.089 0.120 35700 366000
Vd = 12V Idq = 75mA
0.45 0.19 0.410 0.286 2.72 1.27 0.196 187.9 0.096 7.79 0.010 0.089 0.120 24400 238000
UNITS
S pF pF pF pS nH nH nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2021-04
Linear Model for 4mm pHEMT
L - via = 0.0135 nH (5x)
4 UPC
5
Gate Pads (4x)
3 UPC
Drain Pads (4x)
6
2 UPC
7
1 UPC
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2021-04
Unmatched S-parameter for 4mm pHEMT
Bias Conditions: Vd=12V, Idq=300mA
Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.365 -146.77 23.560 103.23 -35.222 15.89 -6.160 -161.81 1 -0.379 -163.15 17.793 91.99 -34.982 7.33 -5.842 -168.07 1.5 -0.380 -168.86 14.297 86.04 -34.977 4.06 -5.709 -169.15 2 -0.379 -171.78 11.782 81.48 -35.024 2.20 -5.581 -168.96 2.5 -0.377 -173.57 9.808 77.50 -35.099 0.95 -5.439 -168.34 3 -0.374 -174.80 8.176 73.84 -35.194 0.03 -5.280 -167.59 3.5 -0.370 -175.70 6.779 70.36 -35.308 -0.66 -5.108 -166.83 4 -0.366 -176.41 5.551 67.03 -35.437 -1.16 -4.925 -166.13 4.5 -0.362 -176.98 4.452 63.81 -35.581 -1.51 -4.735 -165.51 5 -0.358 -177.46 3.454 60.68 -35.739 -1.72 -4.541 -165.01 5.5 -0.353 -177.87 2.537 57.64 -35.908 -1.78 -4.346 -164.61 6 -0.348 -178.24 1.686 54.67 -36.087 -1.70 -4.152 -164.31 6.5 -0.343 -178.56 0.891 51.78 -36.275 -1.48 -3.962 -164.12 7 -0.337 -178.86 0.142 48.96 -36.469 -1.12 -3.776 -164.02 7.5 -0.332 -179.14 -0.566 46.21 -36.668 -0.61 -3.596 -164.01 8 -0.327 -179.40 -1.238 43.53 -36.870 0.05 -3.423 -164.07 8.5 -0.321 -179.64 -1.880 40.92 -37.073 0.85 -3.258 -164.19 9 -0.316 -179.88 -2.493 38.36 -37.274 1.80 -3.099 -164.38 9.5 -0.311 179.90 -3.082 35.87 -37.473 2.89 -2.948 -164.62 10 -0.306 179.68 -3.648 33.45 -37.667 4.12 -2.805 -164.90 10.5 -0.301 179.48 -4.193 31.08 -37.856 5.50 -2.669 -165.21 11 -0.296 179.27 -4.720 28.77 -38.039 7.02 -2.541 -165.56 11.5 -0.291 179.07 -5.229 26.51 -38.212 8.69 -2.419 -165.94 12 -0.286 178.88 -5.722 24.31 -38.373 10.53 -2.304 -166.33 12.5 -0.282 178.69 -6.200 22.16 -38.516 12.52 -2.196 -166.75 13 -0.277 178.50 -6.664 20.07 -38.638 14.65 -2.093 -167.18 13.5 -0.273 178.32 -7.114 18.02 -38.733 16.90 -1.997 -167.62 14 -0.269 178.13 -7.552 16.02 -38.801 19.23 -1.906 -168.07 14.5 -0.265 177.95 -7.979 14.07 -38.839 21.61 -1.820 -168.53 15 -0.261 177.77 -8.395 12.16 -38.849 24.03 -1.738 -168.99 15.5 -0.258 177.60 -8.800 10.29 -38.830 26.44 -1.662 -169.45 16 -0.254 177.42 -9.195 8.47 -38.784 28.84 -1.590 -169.92 16.5 -0.251 177.25 -9.581 6.68 -38.712 31.19 -1.521 -170.39 17 -0.248 177.08 -9.958 4.93 -38.616 33.48 -1.457 -170.86 17.5 -0.245 176.91 -10.328 3.22 -38.498 35.70 -1.396 -171.33 18 -0.242 176.74 -10.689 1.54 -38.361 37.83 -1.338 -171.79 18.5 -0.239 176.57 -11.043 -0.11 -38.207 39.87 -1.283 -172.26 19 -0.237 176.40 -11.390 -1.72 -38.037 41.81 -1.231 -172.72 19.5 -0.234 176.24 -11.730 -3.31 -37.855 43.65 -1.182 -173.18 20 -0.232 176.07 -12.064 -4.87 -37.661 45.38 -1.135 -173.63 20.5 -0.230 175.91 -12.392 -6.39 -37.458 47.01 -1.091 -174.08 21 -0.228 175.74 -12.715 -7.90 -37.248 48.53 -1.049 -174.53 21.5 -0.226 175.58 -13.032 -9.37 -37.032 49.95 -1.009 -174.97 22 -0.224 175.42 -13.345 -10.83 -36.812 51.26 -0.971 -175.41 22.5 -0.222 175.26 -13.653 -12.25 -36.588 52.47 -0.934 -175.85 23 -0.220 175.10 -13.957 -13.66 -36.362 53.59 -0.900 -176.28 23.5 -0.218 174.94 -14.256 -15.05 -36.135 54.61 -0.867 -176.71 24 -0.217 174.78 -14.552 -16.41 -35.908 55.53 -0.836 -177.13 24.5 -0.216 174.62 -14.844 -17.76 -35.682 56.35 -0.806 -177.55 25 -0.214 174.46 -15.133 -19.09 -35.460 57.08 -0.777 -177.97 25.5 -0.213 174.31 -15.418 -20.40 -35.242 57.72 -0.750 -178.38 26 -0.212 174.15 -15.701 -21.70 -35.032 58.28 -0.724 -178.79
Note: The s-parameters are calculated by connecting nodes 1-4 together, and nodes 5-8 together to form a 2-port network.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2021-04 Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
September 19, 2005
TGF2021-04
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use flux Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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